产品用途：高纯钼平面靶材和旋转靶材主要应用于TFT-LCD制造中的栅极和源/漏电极。
Application:
High- purity molybdenum planar and rotary targets are mainly used in electrode gates and source / drain electrodes in TFT-LCD manufacturing.
产品性能参数/Product Property Parameters：
|
化学成分
Chemical Compositions
|
|
主含量，（%，不小于）
Main Content, %, min
|
Mo
|
99.95
|
99.97
|
|
杂质含量
（质量分数），
（%，不大于）
Impurity Content (mass fraction), %, max
|
Al
|
0.0050
|
0.0010
|
|
Ca
|
0.0020
|
0.0020
|
|
Cr
|
0.0100
|
0.0020
|
|
Cu
|
0.0020
|
0.0020
|
|
Fe
|
0.0050
|
0.0020
|
|
K
|
-
|
0.0020
|
|
Mg
|
0.0020
|
0.0010
|
|
Na
|
-
|
0.0010
|
|
Ni
|
0.0050
|
0.0010
|
|
Si
|
0.0050
|
0.0020
|
|
W
|
0.0300
|
0.0300
|
|
S
|
0.0050
|
-
|
|
Cd
|
0.0001
|
-
|
|
C
|
0.0100
|
0.0030
|
|
O
|
0.0080
|
0.0040
|
|
N
|
0.0030
|
0.0010
|
|
注：钼含量为100%减去表中所列杂质元素实测含量的总和（不包含气体元素）；需方如有特殊要求时，由供需双方协商确定，并在合同（或订货单）中注明。
Note: Molybdenum content is the sum of 100% minus the measured content of impurity elements listed in the table (excluding gas elements). Special requirements will be agreed upon by the supplier and buyer, and indicated in the contract or purchase order.
|
其他性能Other Properties:
|
牌号
Grade
|
密度
Density
(g/cm3)
|
平均晶粒尺寸Average Grain Size (um)
|
粗糙度Roughness (um)
|
平面度
Flatness
(mm)
|
贴合率Bonding Rate
|
|
Mo
|
≥10.15
|
≤100
|
≤0.8
|
≤0.30
|
≥98%
|
尺寸Size:
|
形状Shape
|
产品世代
|
靶材尺寸（mm）
|
|
平面Planar
|
G2.5
|
710*630*8
|
|
G 4.5
|
1200*1130*12
|
|
G5
|
1700*1431*12
|
|
G5.5
|
1950*1580*16
|
|
G6
|
2300*1800*14
|
|
2300*190*16
|
|
G8.5
|
2650*210*18
|
|
G10.5
|
3430*200*20
|
|
旋转Rotary
|
G6
|
φ135/167*2158
|
|
G8.5
|
φ135/167*2692
|
注：如有特殊要求，双方具体商定。
Note: Special requirements will be agreed upon by the supplier and buyer.
